Keynotes

IC-MAM features a number of Keynotes. The following talks have already been fixed.

Microwave Acoustic Wave Devices -
A Journey Through the Past to the Future
Amelie Hagelauer

Amelie Hagelauer

Professor
Technical University of Munich, Munich, Germany
Fraunhofer Institute for Electronic Microsystems and Solid State Technologies EMFT, Munich, Germany

This presentation offers a comprehensive overview of the advancements in microwave acoustic wave (SAW and BAW) devices over the past 15 years. It emphasizes the evolution of microwave acoustic wave technology, highlighting significant milestones and breakthroughs. The presentation addresses the challenges and presents solutions for minimizing losses, particularly in BAW devices. It also explores novel materials like AlScN, known for the improved performance characteristics as well as higher frequencies. Additionally, effects of non-linearities in SAW devices and their modeling will be presented. Lastly, the talk offers an insight into the future of microwave acoustic devices.

Evolution of SAW and BAW Devices Using Thin LiTaO3 and LiNbO3
Shuji Tanaka

Shuji Tanaka

Professor
Department of Robotics and Microsystem Integration Center, Tohoku University, Sendai, Japan

This paper reviews three types of HAL (Hetero Acoustic Layer) devices using thin LiTaO3 (LT) and LiNbO3 (LN). The production technology of thin LN and LT on a support wafer is a game-changing technology for acoustic wave devices, which has been made common by Murata Manufacturing’s innovative work, “I.H.P. SAW.” We have started the development of HAL devices in 2013. LT/quartz HAL SAW devices demonstrated promising performances including high impedance ratio, near-zero TCF (temperature coefficient of frequency) and spurious-free high frequency characteristic. LN/quartz HAL SAW devices with an extremely high impedance ratio and ultrawide band were also demonstrated. Thin LT and LN are also useful for BAW devices. In this paper, we introduce an overtone SMR (solidly mounted resonator) using LN on a unique Bragg reflector. The main response is at 9.5 GHz although 1 μm thick LN is used. Finally, new types of BAW devices inspired by “XBAR” is briefly discussed.